JPH0476227B2 - - Google Patents

Info

Publication number
JPH0476227B2
JPH0476227B2 JP58208069A JP20806983A JPH0476227B2 JP H0476227 B2 JPH0476227 B2 JP H0476227B2 JP 58208069 A JP58208069 A JP 58208069A JP 20806983 A JP20806983 A JP 20806983A JP H0476227 B2 JPH0476227 B2 JP H0476227B2
Authority
JP
Japan
Prior art keywords
electrode
semiconductor
groove
forming
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58208069A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60100482A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58208069A priority Critical patent/JPS60100482A/ja
Publication of JPS60100482A publication Critical patent/JPS60100482A/ja
Publication of JPH0476227B2 publication Critical patent/JPH0476227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP58208069A 1983-11-05 1983-11-05 光電変換半導体装置の作製方法 Granted JPS60100482A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58208069A JPS60100482A (ja) 1983-11-05 1983-11-05 光電変換半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58208069A JPS60100482A (ja) 1983-11-05 1983-11-05 光電変換半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPS60100482A JPS60100482A (ja) 1985-06-04
JPH0476227B2 true JPH0476227B2 (en]) 1992-12-03

Family

ID=16550127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58208069A Granted JPS60100482A (ja) 1983-11-05 1983-11-05 光電変換半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JPS60100482A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032609A1 (ja) 2008-09-17 2010-03-25 旭化成ケミカルズ株式会社 オレフィンの製造方法およびその製造装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065776B2 (ja) * 1984-03-26 1994-01-19 株式会社半導体エネルギー研究所 光電変換装置の作製方法
JPS6393169A (ja) * 1986-10-08 1988-04-23 Matsushita Electric Ind Co Ltd 光起電力素子の製造方法
JPS6393168A (ja) * 1986-10-08 1988-04-23 Matsushita Electric Ind Co Ltd 光起電力素子の製造方法
JPH0719913B2 (ja) * 1988-10-14 1995-03-06 富士電機株式会社 薄膜太陽電池
JP5171490B2 (ja) 2008-09-04 2013-03-27 シャープ株式会社 集積型薄膜太陽電池
JP2010074071A (ja) * 2008-09-22 2010-04-02 Sharp Corp 集積型薄膜太陽電池およびその製造方法
JP7656268B2 (ja) 2022-08-16 2025-04-03 Toto株式会社 衛生洗浄装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
JPS5996778A (ja) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS6059785A (ja) * 1983-09-12 1985-04-06 Semiconductor Energy Lab Co Ltd 光電変換装置およびその作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032609A1 (ja) 2008-09-17 2010-03-25 旭化成ケミカルズ株式会社 オレフィンの製造方法およびその製造装置

Also Published As

Publication number Publication date
JPS60100482A (ja) 1985-06-04

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